u430/431 siliconix p-37405erev. d, 04-jul-94 1 matched n-channel jfet pairs product summary part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i g typ (pa) v gs1 v gs2 typ (mv) u430 1 to 4 25 10 15 25 U431 2 to 6 25 10 15 25 features benefits applications two-chip design high slew rate low offset/drift voltage low gate leakage: 15 pa low noise high cmrr: 75 db tight differential match vs. current improved op amp speed, settling time accuracy minimum input error/trimming requirement insignificant signal loss/error voltage high system sensitivity minimum error with large input signals wideband differential amps high-speed, temp-compensated, single-ended input amps high-speed comparators impedance converters description the u430/431 are matched jfet pairs assembled in a to-78 package. these devices offer good power gain even at frequencies beyond 250 mhz. the to-78 package is available with full military processing (see military information). for similar products, see the low-noise u/sst401 series, the high-gain 2n5911/5912, and the low-leakage u421/423 data sheets. 1 to-78 top view d 1 s 1 2 3 7 6 5 g 1 s 2 g 2 d 2 4 case absolute maximum ratings gate-drain, gate-source voltage 25 v . . . . . . . . . . . . . . . . . . . . . . . . gate current 10 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 o from case for 10 sec.) 300 c . . . . . . . . . . . . storage temperature 65 to 200 c . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature 55 to 150 c . . . . . . . . . . . . . . . . . . power dissipation : per side a 300 mw . . . . . . . . . . . . . . . . . total b 500 mw . . . . . . . . . . . . . . . . . . . . notes a. derate 2.4 mw/ c above 25 c b. derate 4 mw/ c above 25 c updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70249.
u430/431 2 siliconix p-37405erev. d, 04-jul-94 specifications a limits u430 U431 parameter symbol test conditions typ b min max min max unit static gate-source breakdown voltage v (br)gss i g = 1 a, v ds = 0 v 35 25 25 v gate-source cutoff voltage v gs(off) v ds = 10 v, i d = 1 na 1 4 2 6 saturation drain current c i dss v ds = 10 v, v gs = 0 v 12 30 24 60 ma gate reverse current i gss v gs = 15 v, v ds = 0 v 5 150 150 pa gate reverse current i gss t a = 150 c 10 150 150 na gate operating current i g v dg = 10 v, i d = 5 ma 15 pa gate operating current i g t a = 150 c 10 na gate-source forward voltage v gs(f) i g = 10 ma , v ds = 0 v 0.8 1 1 v dynamic common-source forward transconductance c g fs v ds =10v i d =10ma f=1khz 15 10 10 ms common-source output conductance c g os v ds = 10 v , i d = 10 ma , f = 1 khz 100 250 250 s common-source input capacitance c iss v gs =10vv ds =0v f=1mhz 4.5 5 5 pf common-source reverse transfer capacitance c rss v gs = 10 v , v ds = 0 v , f = 1 mhz 2 2.5 2.5 pf equivalent input noise voltage e n v ds = 10 v, i d = 10 ma f = 100 hz 6 nv M hz high frequency common-source forward transconductance g fs 14 common-source output conductance g os v ds = 10 v, i d = 10 ma f = 100 mhz 0.13 ms power-match source admittance g ig 12 matching differential gate-source voltage v dg = 10 v, i d = 10 ma 25 mv saturation drain current ratio d v ds = 10 v, v gs = 0 v 0.95 0.9 1 0.9 1 transconductance ratio d
v ds = 10 v, i d = 10 ma, f = 1 khz 0.95 0.9 1 0.9 1 gate-source cutoff voltage ratio d
v ds = 10 v, i d = 1 na 0.95 0.9 1 0.9 1 differential gate current v dg = 10 v, i d = 5 ma 2 pa common mode rejection ratio cmrr v dg = 5 to 10 v, i d = 10 ma 75 db notes a. t a = 25 c unless otherwise noted. nzbd b. typical values are for design aid only, not guaranteed nor subject to production testing. c. pulse test: pw 300 s duty cycle 3%. d. assumes smaller value in the numerator.
u430/431 siliconix p-37405erev. d, 04-jul-94 3 typical characteristics 100 05 4 3 1 80 20 0 50 40 10 0 drain current and transconductance vs. gate-source cutoff voltage gate leakage current v gs(off) gate-source cutoff voltage (v) v dg drain-gate voltage (v) saturation drain current (ma) i dss g fs forward transconductance (ms) gate leakage i g i dss @ v ds = 10 v, v gs = 0 v g fs @ v ds = 10 v, v gs = 0 v f = 1 khz g fs i dss 60 40 2 30 20 04 31215 9 i gss @ 125 c t a = 125 c i g @ i d = 10 ma 10 ma t a = 25 c 200 a i gss @ 25 c 0.1 pa 1 pa 10 pa 100 pa 1 na 10 na on-resistance and output conductance vs. gate-source cutoff voltage common-source forward transconductance vs. drain current i d drain current (ma) v gs(off) gate-source cutoff voltage (v) g fs forward transconductance (ms) t a = 55 c 125 c v gs(off) = 3 v 100 3 5 4 1 80 0 300 240 120 60 0 60 40 20 2 0 180 r ds @ i d = 1 ma, v gs = 0 v g os @ v ds = 10 v, v gs = 0 v, f = 1 khz r ds 0.1 1 10 20 16 8 4 0 12 g os 30 0 1.2 1.6 0.4 2 24 12 6 0 0.8 18 transconductance vs. gate-source voltage v gs gate-source voltage (v) t a = 55 c 125 c g fs forward transconductance (ms) 50 0 1.8 2.4 0.6 3 40 20 10 0 1.2 30 transconductance vs. gate-source voltage v gs gate-source voltage (v) t a = 55 c 25 c 125 c g fs forward transconductance (ms) 200 a v ds = 10 v f = 1 khz v gs(off) = 3 v v ds = 10 v f = 1 khz v gs(off) = 1.5 v v ds = 10 v f = 1 khz 25 c 25 c r ds(on) drain-source on-resistance ( ) s) g output conductance (
u430/431 4 siliconix p-37405erev. d, 04-jul-94 typical characteristics (cont'd) transfer characteristics v gs gate-source voltage (v) drain current (ma) i d 30 0 1.2 0.4 1.6 2 24 12 6 0 18 0.8 t a = 55 c 125 c transfer characteristics v gs gate-source voltage (v) drain current (ma) i d 100 0 1.8 0.6 2.4 3 80 40 20 0 60 1.2 t a = 55 c 25 c 125 c output characteristics v ds drain-source voltage (v) drain current (ma) i d v gs = 0 v 0.2 v 0.4 v 0.6 v 0.8 v 1.0 v 20 068 210 16 8 4 0 4 12 v gs(off) = 1.5 v output characteristics v ds drain-source voltage (v) drain current (ma) i d v gs = 0 v 0.2 v 0.4 v 0.6 v 0.8 v 15 0 0.4 0.2 0.8 1 12 6 3 0 9 0.6 1.0 v v gs(off) = 1.5 v output characteristics v ds drain-source voltage (v) drain current (ma) i d v gs = 0 v 1.2 v 0.4 v 1.6 v 0.8 v 30 0 0.4 0.2 0.8 1 24 12 6 0 18 0.6 2.0 v 2.4 v v gs(off) = 3 v output characteristics v ds drain-source voltage (v) drain current (ma) i d 50 04 2810 40 20 10 0 30 6 2.4 v v gs = 0 v 0.4 v 0.8 v 1.2 v 1.6 v 2.0 v v gs(off) = 3 v 25 c v gs(off) = 3 v v ds = 10 v f = 1 khz v gs(off) = 1.5 v v ds = 10 v f = 1 khz
u430/431 siliconix p-37405erev. d, 04-jul-94 5 typical characteristics (cont'd) 1 10 100 100 80 40 20 0 60 v gs(off) = 1.5 v t a = 25 c 3 v on-resistance vs. drain current i d drain current (ma) 110 0.1 100 80 40 20 0 60 i d drain current (ma) a v g fs r l 1 r l g os r l 10 v i d assume v dd = 15 v, v ds = 5 v v gs(off) = 1.5 v 3 v a v voltage gain circuit voltage gain vs. drain current 15 0 12 16 20 4 12 6 3 0 9 8 common-source input capacitance vs. gate-source voltage v ds = 0 v f = 1 mhz 5 v v gs gate-source voltage (v) common-source reverse feedback capacitance vs. gate-source voltage 10 0 12 20 16 4 8 4 2 0 6 8 v ds = 0 v f = 1 mhz 5 v v gs gate-source voltage (v) reverse feedback capacitance (pf) c rss 100 10 1 0.1 100 1000 (ms) v dg = 10 v i d = 10 ma commongate g ig b ig input admittance vs. frequency f frequency (mhz) 100 10 1 0.1 100 1000 (ms) v dg = 10 v i d = 10 ma commongate g fg b fg forward admittance vs. frequency f frequency (mhz) 200 500 200 500 input capacitance (pf) c iss r ds(on) drain-source on-resistance ( )
u430/431 6 siliconix p-37405erev. d, 04-jul-94 typical characteristics (cont'd) 10 100 1 k 100 k 10 k 20 16 8 4 0 12 equivalent input noise voltage vs. frequency i d = 1 ma v ds = 10 v i d = 10 ma f frequency (hz) 150 120 60 30 0 0.1 1 10 90 output conductance vs. drain current i d drain current (ma) t a = 55 c 25 c 125 c 10 1 0.1 0.01 100 1000 (ms) v dg = 10 v i d = 10 ma commongate b rg g rg +g rg reverse admittance vs. frequency f frequency (mhz) 100 10 1 0.1 100 1000 (ms) v dg = 10 v i d = 10 ma commongate g og b og output admittance vs. frequency f frequency (mhz) 200 500 200 500 v gs(off) = 3 v v ds = 10 v f = 1 khz nv e n / hz ) ( noise voltage s) g output conductance (
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